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| BC846 BC847 BC848 NPN Silicon Planar Epitaxial Transistors Pin configuration: 1. BASE 2. EMITTER 3. COLLECTOR 3 1 2 Unit: inch (mm) SOT-23 SMD Package Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise) DESCRIPTION Collector Base Voltage Collector Emmitter Voltage (VBE = 0V) Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) Collector Current - Peak Emitter Current - Peak Base Current - Peak Total power dissipation up to Tamb = 25 oC Storge Temperature Junction Temperature Thermal Resistance From junction to ambient SYMBOL VCBO VCES VCEO VEBO IC ICM -IEM IBM Ptot** Tstg Tj Rth(j-a)** BC846 80 80 65 6 BC847 50 50 45 6 100 200 200 200 250 -55 to +150 150 500 BC848 30 30 30 5 UNITS V V V V mA mA mA mW o o C C K/W **Mounted on a ceramic substrate of 8mm x 10mm x 0.7mm www.rectron.com 1 of 2 BC846 BC847 BC848 Electrical Characteristics (at Ta=25 C unless otherwise specified) DESCRIPTION Collector Cut Off Current Base Emitter On Voltage Collector Emitter Saturation Voltage Base Emitter Saturation Voltage DC Current Gain SYMBOL TEST CONDITION ICBO VBE(on)* VCE(Sat) VBE(Sat)*** hFE VCB = 30V, IE = 0 VCB = 30V, IE = 0, Tj = 150 C IC = 2mA, VCE = 5V IC = 10mA, VCE = 5V IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5mA IC = 10uA, VCE = 5V BC846A/BC847A/BC848A BC846B/BC847B/BC848B BC847C/BC848C IC = 2mA, VCE = 5V BC846 BC847/BC848 BC846A/BC847A/BC848A BC846B/BC847B/BC848B BC847C/BC848C 110 110 110 200 420 2.5 100 125 125 125 240 450 500 900 260 500 900 10 450 800 220 450 800 90 150 270 0.7 0.9 0.58 o o MIN TYP MAX 15 4 0.7 0.77 0.25 0.60 UNITS nA uA V V V Collector Capacitance Transition Frequency Small Signal Current Gain CC fT | hfe | IE = ie = 0, VCB = 10V, f = 1MHZ IC = 10mA, VCB = 5V, f = 100MHZ pF MHZ IC = 2mA, VCE = 5V, f= 1kHZ BC856 BC857/BC858 BC846A/BC847A/BC848A BC846B/BC847B/BC848B BC847C/BC848C Noise Figure NF IC = 0.2mA, VCE = 5V RS= 2k ohm, f = 1KHZ, B= 200HZ dB *VBE (on) decreases by about 2mV/K with increase temperature. ***VBE (Sat) decreases by about 1.7mV/K with increase temperature. www.rectron.com 2 of 2 |
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